Fujitsu Ferroelectric Random Access Memory (FRAM) Is An Ideal Choice For Applications Requiring High-performance, Non-volatile Memory
Watch this video to learn why Ferroelectric Random Access Memory (FRAM) is the ideal memory choice for applications requiring high-performance, non-volatile memory.
FRAM is significantly faster than EEPROM, offering a write speed similar to SRAM. But FRAM is a non-volatile memory and does not need a battery to retain data when the system power is off. This means that FRAM saves board space, reduces costs associated with batteries and maintenance, and minimizes the risk of data loss.
FRAM (Ferroelectric RAM) is a non-volatile and random access memory (RAM) which retains stored data even when power is turned off. As compared with conventional types of non-volatile memory, such as EEPROM and Flash memory, FRAM exhibits superior performance through faster write speeds, greater read/write cycle endurance and lower power consumption.
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