[VIDEO] Fujitsu Ferroelectric Random Access Memory (FRAM) Speed Comparison Video
Watch this video to learn why Ferroelectric Random Access Memory (FRAM) is the ideal memory choice for applications requiring high-performance, non-volatile memory.
Fujitsu FRAM is significantly faster than EEPROM, offering a write speed similar to SRAM. But FRAM is a non-volatile memory and does not need a battery to retain data when the system power is off. This means that FRAM saves board space, reduces costs associated with batteries and maintenance, and minimizes the risk of data loss.
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